The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Aug. 11, 2021
The Regents of the University of California, Oakland, CA (US);
Panpan Li, Goleta, CA (US);
Hongjian Li, Goleta, CA (US);
Michael Iza, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Steven P. Denbaars, Goleta, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
A method to fabricate micro-size III-nitride light emitting diodes (μLEDs) with an epitaxial tunnel junction comprised of a p+GaN layer, an InAlGaN insertion layer, and an n+GaN layer, grown using metalorganic chemical vapor deposition (MOCVD), wherein the μLEDs have a low forward voltage. The InAlGaN insertion layer has a smaller energy bandgap than the GaN layers, which reduces a depletion width of the tunnel junction and increases the tunneling probability. The μLEDs are fabricated with dimensions that vary from 25 to 10,000 μm. It was found that the InAlGaN insertion layer can reduce the forward voltage at 20 A/cmby at least 0.6 V. The tunnel junction μLEDs with an n-type and p-type InAlGaN insertion layer had a low forward voltage at 20 A/cmthat was very stable. At dimensions smaller than 1600 μm, the low forward voltage is less than 3.2 V.