The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Dec. 21, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Utkarsh Bajpai, Delmar, NY (US);

James P Mazza, Saratoga Springs, NY (US);

Shahrukh Khan, Sandy Hook, CT (US);

Biswanath Senapati, Mechanicville, NY (US);

Nicholas Anthony Lanzillo, Wynantskill, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/0128 (2025.01); H10D 84/0135 (2025.01); H10D 84/038 (2025.01);
Abstract

Semiconductor devices and methods of forming the same include a top transistor that includes a first channel and a first gate. A bottom transistor includes a second channel and a second gate that has a top surface at a same height as a top surface of the first gate. A gate barrier includes a horizontal part between the bottom transistor and the top transistor and a vertical part that extends from the horizontal part to a same height as the top surfaces of the first gate and the second gate.


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