The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Aug. 05, 2021
Applicant:
Qorvo Us, Inc., Greensboro, NC (US);
Inventors:
Jinqiao Xie, Allen, TX (US);
Edward A. Beam, III, Plano, TX (US);
Assignee:
Qorvo US, Inc., Greensboro, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/85 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/824 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8503 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/824 (2025.01);
Abstract
A semiconductor device is disclosed. The semiconductor device has a substrate with a gallium nitride layer () disposed over the substrate. A scandium aluminum nitride layer () is disposed over the gallium nitride layer. A source () is in contact with the gallium nitride layer, and a drain () is spaced from the source, wherein the drain is in contact with the gallium nitride layer.