The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Dec. 26, 2023
Applicant:
Resonac Corporation, Tokyo, JP;
Inventors:
Yumiko Nakamura, Tokyo, JP;
Yuzo Sasaki, Tokyo, JP;
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/832 (2025.01); C30B 29/36 (2006.01); H10P 70/00 (2026.01); H10P 90/00 (2026.01); C30B 23/02 (2006.01);
U.S. Cl.
CPC ...
H10D 62/8325 (2025.01); C30B 29/36 (2013.01); H10P 70/15 (2026.01); H10P 90/128 (2026.01); H10P 90/129 (2026.01); C30B 23/025 (2013.01);
Abstract
A SiC wafer according to the present embodiment includes an end region within 5 mm from an outer circumferential end, wherein, in the end region, the concentration of each of Ti, V and Zr is 5.0×10atoms/cmor less, the concentration of each of Cr, Ni, Cu, W, Mo and Mn is 1.0×10atoms/cmor less, and the concentration of each of B, Al and Fe is 5.0×10atoms/cmor less.
Nakamura, Yumiko. (2026). Sic wafer having an end region with low concentrations of metal impurities and sic epitaxial wafer (U.S. Patent No. 12696509). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12696509
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile