The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Aug. 08, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Teresa J. Wu, Rexford, NY (US);
Chen Zhang, Guilderland, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a substrate; a first nanosheet transistor, which is located on the substrate, that has a first inter-channel spacing and that has a thin gate oxide layer; and a second nanosheet transistor, which is located on the substrate, that has a second inter-channel spacing that is greater than the first inter-channel spacing and that has a thick gate oxide layer that is thicker than the thin gate oxide layer of the first nanosheet transistor. The second nanosheet transistor comprises channel structures and a source/drain structure that wraps around the ends of the channel structures. In embodiments, there are inner spaces at ends of the gate stacks in the first transistor, but not at the ends of the gate stacks in the second transistor.