The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Feb. 17, 2023
Fuji Electric Co., Ltd., Kawasaki, JP;
Syunki Narita, Matsumoto-city, JP;
Shinsuke Harada, Tsukuba-city, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device including a semiconductor substrate, a parallel pn layer and a device structure provided in the semiconductor substrate, first and second electrodes respectively provided at two main surfaces of the semiconductor substrate, the first electrode being electrically connected to the device structure. The parallel pn layer includes first-conductivity-type column regions and second-conductivity-type column regions that are adjacently disposed and repeatedly alternate with one another in a first direction parallel to the first main surface, that each extend in a second direction parallel to the first main surface and orthogonal to the first direction, and that are of a same impurity concentration. A portion of the second-conductivity-type column regions is shorter than the rest thereof. The parallel pn layer has a first portion and a second portion respectively closer to the first and second main surfaces, the first portion being more p-rich, and less n-rich, than the second portion.