The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Oct. 10, 2024
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Abhinay Sandupatla, Leuven, BE;
Bartlomiej Jan Pawlak, Leuven, BE;
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/824 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01); H10D 64/112 (2025.01); H10D 62/824 (2025.01);
Abstract
Structures for a high-electron-mobility transistor and methods of forming such structures. The structure comprises a device structure that includes a gate and an ohmic contact, and one or more active blocks that are laterally positioned between the gate and the ohmic contact. The one or more active blocks are configured to receive a supply voltage that is different from ground.
Sandupatla, Abhinay. (2026). High-electron-mobility transistors with active blocks (U.S. Patent No. 12696473). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12696473
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile