The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Oct. 06, 2023
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chun-Yi Chang, Taoyuan City, TW;
Chia-Hui Lin, Taichung City, TW;
Tai-Chun Huang, Hsin-Chu City, TW;
Tze-Liang Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a metal gate structure and an isolation structure adjacent to the metal gate structure. The isolation structure includes a first dielectric layer, a second dielectric layer over the first dielectric layer and a third dielectric layer over the second dielectric layer. The first dielectric layer includes carbon of a first concentration, the second dielectric layer includes carbon of a second concentration, and the third dielectric layer includes carbon of a third concentration. The third concentration is greater than the second concentration, and the second concentration is greater than the first concentration.