The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Jan. 09, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ming-Hsun Lin, Hsinchu, TW;
Yu Jiang, Taipei City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate and a deep trench capacitor structure. The deep trench capacitor structure includes a plurality of electrode layers and a plurality of dielectric layers alternately stacked, a contact via and at least one pair of spacers. The electrode layers and the dielectric layers form a mirror staircase portion over the substrate and a deep trench portion in the substrate. The contact via is electrically connected to a bottommost one of the electrode layers in the mirror staircase portion. The at least one pair of spacers is disposed on the mirror staircase portion and surrounds the contact via.