The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Aug. 04, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Tsung Kuo, Tainan, TW;
Ming Chyi Liu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A fabrication method includes: forming, over a first dielectric layer between a first metal portion and a second metal portion, a thin film resistor (TFR); forming openings in the first dielectric layer over the first metal portion and the second metal portion; and forming a first bond pad in an opening over the first metal portion and a second bond pad in an opening over the second metal portion; wherein the first dielectric layer is disposed between the first bond pad and the second bond pad, the TFR is formed over the first dielectric layer between the first bond pad and the second bond pad, the TFR has an electrical connection at a first end to the first bond pad and an electrical connection at a second end to the second bond pad, and the TFR provides a resistive path between the first bond pad and the second bond path.