The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Sep. 28, 2022
Changxin Memory Technologies, Inc., Hefei City, CN;
Deyuan Xiao, Hefei City, CN;
Kanyu Cao, Hefei City, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present disclosure provides a semiconductor structure and a manufacturing method thereof. The method of manufacturing the semiconductor structure provided by the present disclosure includes: providing a substrate; forming a base pattern on the substrate, where the base pattern includes a plurality of bit lines arranged in parallel, and an isolation structure is disposed between adjacent two of the bit lines; forming a plurality of semiconductor pillars arranged in a direction of the bit line on a surface of each of the bit lines, where the bit line is electrically connected to the semiconductor pillar; forming a gate-all-around structure on a surface of the semiconductor pillar, where the gate-all-around structure includes a first insulating layer, a gate structure layer, and a second insulating layer that are sequentially disposed on a side surface of the semiconductor pillar.