The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

May. 22, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei City, CN;

Inventor:

Qinghua Han, Hefei, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/485 (2023.02); H10B 12/03 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02);
Abstract

A method for manufacturing a memory includes: providing a substrate provided with bit lines, each bit line including a plurality of straight line segments connected end to end in sequence, and adjacent straight line segments have an included angle therebetween; forming active pillars and insulating layers on the substrate, each straight line segment of each bit line being electrically connected with at least two active pillars, each insulating layer extending in a first direction and covering the outer peripheral surface of the active pillar; filling a first support layer between adjacent insulating layers; removing part away from the substrate, of each insulating layer to form a filling space; and forming a dielectric layer and a conductive layer between parts exposed in the filling space and close to the substrate, of the active pillars.


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