The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

May. 09, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tai-Chun Huang, New Taipei City, TW;

Stefan Rusu, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/025 (2006.01); G02B 6/132 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); G02B 6/132 (2013.01); G02B 2006/12083 (2013.01); G02B 2006/12142 (2013.01);
Abstract

In some embodiments, the present disclosure provides an optical module. A waveguide includes a rib, and further includes a first protrusion and a second protrusion respectively on opposite sides of the rib. Further, the waveguide is formed of a first semiconductor material. A photodetector is in the waveguide and comprises a PN junction in the rib. A P type region of the PN junction extends to the first protrusion, and an N type region of the PN junction extends to the second protrusion. Further, the first and second protrusions accommodate heavily doped P and N type contact regions. A semiconductor region is on the PN junction. The semiconductor region comprises a second semiconductor material different the first semiconductor material. For example, the second semiconductor material may have a smaller bandgap than the first semiconductor material to enhance quantum efficiency.


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