The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Jan. 04, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sung Yoon Ryu, Suwon-si, KR;
Donghyun Lee, Suwon-si, KR;
Sooseok Lee, Suwon-si, KR;
Younghoon Sohn, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of fabricating a semiconductor device may include disposing a first aperture on a surface of a substrate; positioning a first ultrasonic wave receiving probe on the surface of the substrate in the first aperture; disposing a second aperture on the surface of the substrate; positioning a second ultrasonic wave receiving probe on the surface of the substrate in the second aperture; transmitting an ultrasonic wave to the substrate; and receiving a reflection ultrasonic wave, which is reflected by a portion in the substrate. The receiving of the reflection ultrasonic wave comprises one of: receiving the reflection ultrasonic wave, which is transmitted through the first aperture, using the first ultrasonic wave receiving probe positioned on the surface of the substrate; and receiving the reflection ultrasonic wave, which is transmitted through the second aperture, using the second ultrasonic wave receiving probe positioned on the surface of the substrate. The first ultrasonic wave receiving probe and the second ultrasonic wave receiving probe are spaced apart from each other in a horizontal direction.