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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12690437 B1

PDFFull Text
Date of Patent:
Jul. 21, 2026

Filed:

Aug. 01, 2022

Semiconductor fabrication method with improved deposition quality and semiconductor structure thereof

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Rui Song, Wuhan, CN;

Jie Pan, Wuhan, CN;

Peng Ding, Wuhan, CN;

Jiewen Zhang, Wuhan, CN;

Xufang Chen, Wuhan, CN;

Assignee:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Attorney:

Anova Law Group, PLLC

Primary Examiner:

Telly D Green

Int. Cl.
CPC ...
H10W 20/20 (2026.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10W 80/00 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/20 (2026.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10W 90/00 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 90/792 (2026.01);
Abstract

A structure includes a base layer and conductive element in a dielectric region. The base layer includes a first material and is perpendicular to a direction. The conductive element includes a conductive material and contacts the base layer and the dielectric region. An interface parallel to the direction is formed between the conductive element and the dielectric region. A deposition rate of the conductive material over a surface of the base layer is higher than that over a surface of the dielectric region.

Find Patent Forward Citations

Song, Rui. (2026). Semiconductor fabrication method with improved deposition quality and semiconductor structure thereof (U.S. Patent No. 12690437). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12690437

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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