The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Feb. 23, 2023
International Business Machines Corporation, Armonk, NY (US);
Tao Li, Slingerlands, NY (US);
Richard C. Johnson, Selkirk, NY (US);
Kisik Choi, Watervliet, NY (US);
Ruilong Xie, Niskayuna, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
According to the embodiment of the present invention, a semiconductor device includes a first nanodevice and a second nanodevice. The second nanodevice is adjacent to and parallel to the first nanodevice along an x-axis. A dielectric fill is located between the first nanodevice and the second nanodevice. A dielectric liner is comprised of a first dielectric liner and a second dielectric liner. The first dielectric liner is located between the first nanodevice and the dielectric fill. The second dielectric liner is located between the second nanodevice and the dielectric fill. A plurality of self-aligned contact (SAC) caps is comprised of a head section and a shaft section. The head section extends a first width parallel to the x-axis and is in direct contact with a frontside of the dielectric liner. The shaft section extends a second width parallel to the x-axis. The first width is greater than the second width.