The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Nov. 11, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Dixiong Wang, Milpitas, CA (US);

XI Cen, San Jose, CA (US);

Kai Wu, Palo Alto, CA (US);

Peiqi Wang, Campbell, CA (US);

Yang Li, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/057 (2026.01); H10W 20/045 (2026.01); H10W 20/048 (2026.01); H10W 20/056 (2026.01);
Abstract

A method of forming a structure on a substrate that includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer to a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow points within the at least one opening. The method includes exposing the at least one opening of the substrate to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening to a molybdenum-containing gas to remove a tungsten nitride layer from the tungsten fill layer.


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