The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
May. 03, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Shih-Yen Lin, New Taipei City, TW;
PO-Cheng Tsai, Taichung City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A semiconductor device includes a substrate. A 2-D material channel layer is over the substrate, in which the 2-D material channel layer includes a channel region and source/drain regions on opposite sides of the channel region. Source/drain metals are over of the source/drain regions of the 2-D material channel layer. A gate metal is over the substrate and non-overlapping the 2-D material channel layer along a vertical direction, in which the gate metal is laterally separated from the 2-D material channel layer by an air gap.