The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Nov. 29, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 50/00 (2026.01); H01J 37/32 (2006.01); H10P 50/24 (2026.01); H10P 50/26 (2026.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
H01J 37/32495 (2013.01); H01J 37/32449 (2013.01); H01J 37/3255 (2013.01); H01J 37/32568 (2013.01); H10P 50/242 (2026.01); H10P 50/268 (2026.01); H10P 50/283 (2026.01); H10P 50/73 (2026.01); H01J 2237/3321 (2013.01); H01J 2237/3341 (2013.01);
Abstract
A disclosed etching method includes (a) forming a protective film containing carbon on a surface in a chamber of a plasma processing apparatus. The etching method further includes (b) etching an etch film of a substrate with plasma generated from an etching gas that includes a hydrogen fluoride gas and a hydrofluorocarbon gas within the chamber. The substrate includes the etch film, which is a silicon-containing film, and a mask containing carbon and provided on the etch film.