The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Apr. 24, 2023
Applicant:

Tel Manufacturing and Engineering of America, Inc., Chaska, MN (US);

Inventors:

Angelique Raley, Albany, NY (US);

Luis Fernandez, North Chelmsford, MA (US);

Brian Pfeifer, Hopewell Junction, NY (US);

Joshua Larose, Albany, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/78 (2012.01); G03F 1/80 (2012.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/78 (2013.01); G03F 1/80 (2013.01); G03F 7/16 (2013.01); G03F 7/20 (2013.01);
Abstract

A method for processing a substrate with a gas cluster ion beam (GCIB) that includes: receiving, at a GCIB controller, control signals from a tool controller to change a GCIB process parameter during a GCIB scanning process, the changing in the GCIB process parameter associated with a variation in the depth of recesses to be formed over the substrate with the GCIB scanning process; and performing the GCIB scanning process in a GCIB process chamber, the performing including scanning a GCIB across a portion of the substrate according to the control signals to form the recesses with varying depths, the variation in the depth of the recesses having a gradient associated with the change in the GCIB process parameter.


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