The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Feb. 08, 2021
Applicant:
University of South Florida, Tampa, FL (US);
Inventors:
Michael Cai Wang, Tampa, FL (US);
Yunjo Jeong, Tampa, FL (US);
Assignee:
University of South Florida, Tampa, FL (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 32/19 (2017.01); B28B 11/08 (2006.01); B28B 11/10 (2006.01); C04B 35/14 (2006.01); C04B 41/45 (2006.01); C04B 41/50 (2006.01);
U.S. Cl.
CPC ...
B28B 11/0863 (2013.01); B28B 11/10 (2013.01); C01B 32/19 (2017.08); C04B 35/14 (2013.01); C04B 41/4505 (2013.01); C04B 41/4572 (2013.01); C04B 41/5001 (2013.01); C04B 2235/945 (2013.01);
Abstract
A method of forming a layered material including arranging a 2DLM on a base material comprising one or more Moiré interferences, and adding material or removing material at a location of the one or more Moiré interferences.
Wang, Michael. (2026). Method of forming patterns in layered materials at an atomic scale (U.S. Patent No. 12686148). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12686148
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile