The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Apr. 20, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventors:
Da-Jun Lin, Kaohsiung City, TW;
Chih-Wei Chang, Tainan City, TW;
Fu-Yu Tsai, Tainan City, TW;
Bin-Siang Tsai, Changhua County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/76832 (2013.01); H01L 23/53238 (2013.01);
Abstract
A semiconductor structure includes a substrate; a first dielectric layer on the substrate; an etch stop layer on the first dielectric layer; a second dielectric layer on the etch stop layer; a first conductor and a second conductor in the second dielectric layer, an air gap in the second dielectric layer and between the first conductor and the second conductor; and a low-polarity dielectric layer on a sidewall surface of the second dielectric layer within the air gap.