The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Feb. 22, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Tsung-Chieh Hsiao, Hsinchu, TW;

Liang-Wei Wang, Hsinchu, TW;

Dian-Hau Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/20 (2026.01); H10W 20/00 (2026.01); H10W 90/00 (2026.01); H10W 90/20 (2026.01);
U.S. Cl.
CPC ...
H10W 20/20 (2026.01); H10W 20/023 (2026.01); H10W 20/056 (2026.01); H10W 20/076 (2026.01); H10W 90/00 (2026.01); H10W 90/297 (2026.01);
Abstract

A via structure, a semiconductor structure, and methods for forming the via structure and the semiconductor structure are presented. A via structure includes a first conductive portion through an interconnect structure, a second conductive portion through a substrate and in contact with the first conductive portion, and a liner layer. The liner layer is between the first conductive portion and the interconnect structure, and between the second conductive portion and the substrate. The liner layer includes a portion extending parallel to a surface of the substrate.


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