The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jul. 06, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Yang Ming Chiao Tung University, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu City, TW;
Abstract
A method includes forming a first conductive feature over a first semiconductor structure; forming a first dielectric layer over the first conductive feature and the first semiconductor structure; removing a portion of the first dielectric layer to expose a top surface of the first conductive feature; forming a second conductive feature over a second semiconductor structure, wherein the first and second conductive features comprise nanotwinned copper; forming a second dielectric layer over the second conductive feature and the second semiconductor structure, wherein the second dielectric layer comprises a same material as the first dielectric layer; removing a portion of the second dielectric layer to expose a top surface of the second conductive feature; and performing a hybrid bonding process to bond the first dielectric layer to the second dielectric layer and bond the first conductive feature to the second conductive feature.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile