The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Mar. 09, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Harry-Haklay Chuang, Zhubei, TW;
Wei Cheng Wu, Hsinchu County, TW;
Chung-Jen Huang, Tainan, TW;
Wen-Tuo Huang, Tainan, TW;
Chia-Sheng Lin, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming first IC devices on a first frontside of a first semiconductor substrate and second IC devices on a second frontside of a second semiconductor substrate; forming a first contact pad over the first IC devices from the first frontside and a second contact pad over the second IC device from the second frontside; bonding the first and second contact pads such that the first and second IC devices are electrically connected; and forming a conductive structure on a first backside of the first semiconductor substrate. The conductive structure includes a through via (TV), a backside metal (BSM) feature, and a backside redistribution layer (BRDL). The TV is extending through the first semiconductor substrate and electrically connected the first and second IC devices to the BRDL, and the BSM feature is extended into a portion of the first semiconductor substrate and electrically connected to the TV.