The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Sep. 13, 2023
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Yohei Ishii, Hillsboro, OR (US);

Kathryn Maier, Hillsboro, OR (US);

Lucas Kovatch, Hillsboro, OR (US);

Makoto Miura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/26 (2026.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H10P 50/267 (2026.01); H01J 37/3244 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma processing method of etching a ruthenium-containing film using a first etching process (S) and a subsequent second etching process (S). Scomprises a first step (S) where a modified layer is formed on the surface of the ruthenium-containing film using a halogen element-containing plasma, and a following second step (S) to desorb the modified layer using a plasma generated with an oxygen element-containing gas; Sand Sare repeated alternately.


Find Patent Forward Citations

Ishii, Yohei. (2026). Plasma processing method (U.S. Patent No. 12685053). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12685053

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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