The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Mar. 24, 2022
Fuji Electric Co., Ltd., Kanagawa, JP;
Motoyoshi Kubouchi, Matsumoto-city, JP;
Takashi Yoshimura, Matsumoto-city, JP;
Hiroshi Takishita, Matsumoto-city, JP;
Misaki Uchida, Matsumoto-city, JP;
Michio Nemoto, Matsumoto-city, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface, and containing a bulk donor; a buffer region of a first conductivity type which is disposed on the lower surface side of the semiconductor substrate and contains a hydrogen donor, and in which a doping concentration distribution in a depth direction of the semiconductor substrate has a single first doping concentration peak; a high-concentration region of a first conductivity type which is disposed between the buffer region and the upper surface of the semiconductor substrate, contains a hydrogen donor, and has a donor concentration higher than a bulk donor concentration; and a lower surface region of a first conductivity type or a second conductivity type which is disposed between the buffer region and a lower surface of the semiconductor substrate, and has a doping concentration higher than the high-concentration region.