The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jun. 15, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Woongsik Nam, Santa Clara, CA (US);
Euhngi Lee, San Jose, CA (US);
Tianyang Li, San Jose, CA (US);
Jisung Park, Sunnyvale, CA (US);
Hang Yu, San Jose, CA (US);
Deenesh Padhi, Saratoga, CA (US);
Shichen Fu, Santa Clara, CA (US);
Yufeng Jiang, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Exemplary processing methods may include i) providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include one or more features defining one or more sidewalls. The methods may include ii) forming plasma effluents of the one or more deposition precursors. The methods may include iii) contacting the substrate with the plasma effluents of the one or more deposition precursors. The contacting may deposit a doped silicon-and-oxygen-containing material on the substrate. A first portion of the doped silicon-and-oxygen-containing material deposited on the one or more sidewalls of the one or more features may be characterized by a poorer film quality than a second portion of the doped silicon-and-oxygen-containing material deposited on a lower portion of the one or more features.