The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Dec. 09, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Santosh Sharma, Austin, TX (US);
Michael J. Zierak, Colchester, VT (US);
Mark D. Levy, Williston, VT (US);
Steven J. Bentley, Menands, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc, Malta, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/86 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01); H10D 84/05 (2025.01);
U.S. Cl.
CPC ...
H10D 84/86 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 64/111 (2025.01); H10D 84/05 (2025.01); H10D 62/8503 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a bidirectional device, methods of manufacture and methods of operation. The structure includes: a first gate structure adjacent to a first source region; a second gate structure adjacent to a second source region; and field plates adjacent to the first gate structure, the second gate structure and a surface of an active layer of the first gate structure and the second gate structure.