The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Sep. 27, 2022
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Nan Wang, Shanghai, CN;
Abstract
A semiconductor structure and its fabrication method are provided. The semiconductor structure includes: a substrate including a base substrate, fins, and an isolation structure; a first dielectric layer; gate structures in the first dielectric layer, where each gate structure includes a gate electrode layer and a gate dielectric layer; air spacers and second spacers on sidewalls of gate electrode layers, where the air spacers are located between the gate electrode layers and the second spacers to expose the sidewalls of the gate electrode layers and the second spacers; source/drain layers in the fins at sides of each gate structure; first conductive structures in the first dielectric layer and on the source/drain layers; and a second dielectric layer on the first dielectric layer and the gate structures, located on the air spacers. The air spacers are also located between the first conductive structures and the gate electrode layers.