The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
May. 10, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Shing-Huang Wu, Hsin-Chu City, TW;
Jian-Shian Chen, Hsin-Chu City, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01); H10D 62/00 (2025.01); H10D 62/13 (2025.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01); H10P 50/24 (2026.01); H10D 62/40 (2025.01); H10D 62/822 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/151 (2025.01); H10D 30/0275 (2025.01); H10D 30/797 (2025.01); H10D 62/021 (2025.01); H10P 14/24 (2026.01); H10P 14/27 (2026.01); H10P 50/242 (2026.01); H10D 30/0212 (2025.01); H10D 62/405 (2025.01); H10D 62/822 (2025.01); H10D 64/017 (2025.01); H10P 14/3411 (2026.01);
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes an epitaxial structure over a substrate and a cap element over the epitaxial structure. The cap element has a first thickness measured between a top surface of the cap element and a top surface of the epitaxial structure. The cap element has a second thickness measured between a side surface of the cap element and a side surface of the epitaxial structure. The first thickness and the second thickness are different from each other.