The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jul. 01, 2020
Robert Bosch Gmbh, Stuttgart, DE;
Jens Baringhaus, Sindelfingen, DE;
ROBERT BOSCH GMBH, Stuttgart, DE;
Abstract
A vertical field effect transistor. The vertical field effect transistor includes a trench structure having a first side and a second side opposite the first side. A field effect transistor (FET) channel is formed at the first side, and the second side is free of a FET channel. The FET channel includes a gallium nitride (GaN) region and an aluminum gallium nitride (AlGaN) region adjacent thereto. The GaN region includes a p-conductive first region and a second region formed thereon. The vertical field effect transistor also includes a source electrode that is electroconductively connected to the p-conductive first region of the GaN region and to the AlGaN region.