The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jun. 18, 2023
Fuji Electric Co., Ltd., Kanagawa, JP;
Hidenori Tsuji, Higashimurayama-city, JP;
Katsunori Ueno, Matsumoto-city, JP;
Shinya Takashima, Hachioji-city, JP;
Takashi Yoshimura, Matsumoto-city, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A manufacturing method of a semiconductor apparatus including: setting, depending on a distribution of the carrier concentrations that the buffer region should have, a dose amount of hydrogen ions to be implanted into a plurality of depth positions corresponding to the plurality of concentration peaks; and implanting, depending on the dose amount that is set in the setting, the hydrogen ions into the semiconductor substrate is provided. In the setting, among the plurality of concentration peaks, the dose amount of the hydrogen ions for a deepest peak farthest from the lower surface of the semiconductor substrate is set depending on a carbon concentration of the semiconductor substrate, and the dose amount for at least one of the concentration peaks other than the deepest peak is set regardless of the carbon concentration of the semiconductor substrate.