The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Aug. 16, 2023
Changxin Memory Technologies, Inc., Hefei City, CN;
Mengmeng Yang, Hefei City, CN;
Yi Tang, Hefei City, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei City, CN;
Abstract
A method for forming a semiconductor structure includes the following operations. A substrate is provided and includes a stacked structure and a first isolation structure that are alternately arranged in a first direction. A grid-like etched groove extending in the first direction is formed in the stacked structure and the first isolation structure, and divides the substrate into a first region and a second region that are arranged sequentially in a second direction. The first direction and the second direction are any two directions in a plane where the substrate is located. A second isolation structure is formed in the grid-like etched groove. A transistor structure and a capacitor structure are respectively formed in the first region and the second region, and are isolated by the second isolation structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile