The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Oct. 02, 2023
Globalfoundries U.s. Inc., Malta, NY (US);
Abdellatif Bellaouar, Richardson, TX (US);
Shafiullah Syed, Murphy, TX (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
A disclosed structure includes a power amplifier and circuitry for implementing a biasing scheme that enables high power operation. The power amplifier includes parallel transistor chains connected to input and output transformers. Each chain includes series-connected first, second, and third n-type field effect transistors (NFETs) having front and back gates. The output transformer receives a variable positive power supply voltage generated using average power tracking. Front and back gates of each third NFET receive a positive bias voltage greater than or equal to the variable positive power supply voltage and a negative bias voltage, respectively. By negative back biasing the third NFETs, threshold voltages thereof are raised so a high positive bias voltage can be applied to the front gates to increase power output without violating reliability specifications. Optionally, by making the negative bias voltage temperature dependent, voltages at source regions of the third NFETs are held constant.