The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Dec. 18, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Taihei Matsuhashi, Kurokawa-gun, JP;

Wakako Ishida, Kurokawa-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/00 (2026.01); H01J 37/32 (2006.01); H10P 50/28 (2026.01); H10P 72/00 (2026.01);
U.S. Cl.
CPC ...
H01J 37/32146 (2013.01); H01J 37/32091 (2013.01); H01J 37/32128 (2013.01); H01J 37/32137 (2013.01); H01J 37/32174 (2013.01); H01J 37/32449 (2013.01); H10P 50/283 (2026.01); H10P 50/73 (2026.01); H10P 72/0421 (2026.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A disclosed etching method includes (a) preparing a substrate on a substrate support in a chamber. The substrate includes a multilayer film including a plurality of first films and a plurality of second films that are alternately stacked with the plurality of first films, and a mask disposed on the multilayer film. The etching method further includes (b) etching one or more first films among the plurality of first films. The etching method further includes (c) etching one or more second films among the plurality of second films. In each of the (b) and (c), a pulse of a source radio frequency power for plasma generation and a pulse of an electric bias for ion attraction are intermittently or periodically supplied.


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