The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Aug. 01, 2024
Sandisk Technologies, Inc., Milpitas, CA (US);
Albert Bor Kai Chen, Milpitas, CA (US);
Sujjatul Islam, San Jose, CA (US);
Jiahui Yuan, Fremont, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
Technology for re-calibrating a temperature coefficient (Tco) for reading NAND memory cells. The Tco may be re-calibrated based on an amount of data retention impact to NAND memory cells since the NAND memory cells were programmed. The data retention impact may be measured by determining a shift to a candidate Vt distribution. The candidate Vt distribution may be selected as one that exhibits a significant data retention impact. The Tco may include, but is not limited to a bit line voltage Tco or a Vread Tco. The bit line voltage Tco may be used to establish the bit line voltage during read. The Vread Tco may be used to establish a voltage to unselected word lines during read.