Memory device and operation method thereof, memory system, and storage medium

Abstract

In some examples, a peripheral circuit is configured to: when performing a first read operation on memory cells coupled to a selected word line, apply a first pass voltage to a first word line, apply a second pass voltage to a second word line, and apply a third pass voltage to a third word line, wherein the first word line comprises at least one word line physically located above and below the selected word line respectively, both the second word line and the third word line comprise word lines physically located on a side of the first word line away from the selected word line, memory cells coupled to the second word line comprise programmed memory cells, memory cells coupled to the third word line comprise unprogrammed memory cells, and the first pass voltage, the second pass voltage and the third pass voltage are all different.