The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Aug. 03, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Harry-Hak-Lay Chuang, Zhubei City, TW;
Ching-Huang Wang, Hsinchu, TW;
Hung Cho Wang, Hsinchu, TW;
Tien-Wei Chiang, Taipei City, TW;
Wen-Chun You, Yilan County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An exemplary magnetoresistive random-access memory (MRAM) cell is configured to store more than one bit. The MRAM cell includes a first magnetic tunneling junction (MTJ) and a second MTJ connected in parallel. The first MTJ has a first diameter, the second MTJ has a second diameter, and the second diameter is less than the first diameter. The MRAM cell further includes a transistor connected to the first MTJ and the second MTJ, a bit line connected to the first MTJ and the second MTJ, a word line connected to the transistor, and a source line connected to the transistor. A method of writing to the MRAM cell can include supplying one or more write voltages to the MRAM cell (e.g., having different levels) depending on an initial memory state and a desired memory state of the MRAM cell.