The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Oct. 06, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Taeyoon An, Hwaseong-si, KR;
Sangwoon Lee, Seoul, KR;
Sungjin Kim, Hwaseong-si, KR;
Seunghyun Kim, Seoul, KR;
Wonki Roh, Yongin-si, KR;
Chulwoo Park, Seoul, KR;
Seongjae Byeon, Suwon-si, KR;
Joohyun Jeon, Hwaseong-si, KR;
Hyoeun Jung, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method for predicting a defect in a semiconductor device includes: calculating a first probability that particles will be generated in a semiconductor element by radiation; calculating a second probability that damage will occur in the semiconductor element due to the particles; generating a training data set using input data and simulation data, the input data including damage data generated using the first probability and the second probability and including at least one of a position in which the damage will occur and an amount of the damage, impurity concentration of impurities doped in at least a portion of the semiconductor element, and structural data of the semiconductor element, and the simulation data including electrical characteristics of the semiconductor element obtained as a result of a simulation based on the input data; and training a machine learning model based on the training data set to generate a defect prediction model.