The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Sep. 27, 2023
Applicant:

Fei Company, Hillsboro, OR (US);

Inventors:

Vojtěch Mahel, Boršice u Blatnice, CZ;

Branislav Straka, Brno, CZ;

Libor Novák, Brno, CZ;

Jeremy Graham, Portland, OR (US);

Assignee:

FEI Company, Hillsboro, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/2251 (2018.01); G01N 23/203 (2006.01);
U.S. Cl.
CPC ...
G01N 23/2251 (2013.01); G01N 23/203 (2013.01); G01N 2223/505 (2013.01);
Abstract

Dual beam charged particle microscopy systems, sensors, and techniques are disclosed. A charged particle microscope system can include a vacuum chamber, a sample stage disposed in the vacuum chamber, a first beam source operable to direct a first particle beam into the vacuum chamber, a second beam source operable to direct a second particle beam into the vacuum chamber, a first charged particle sensor, and a second charged particle sensor. The first charged particle sensor can include a detector cell having a semiconductor layer characterized by a bandgap equal to or greater than about 2.0 eV, oriented to detect secondary electrons generated based on an interaction between the first particle beam or the second particle beam and the sample. The second charged particle sensor can include a scintillator detector configured to be saturated from electrons generated based on an interaction between the second particle beam and the sample.


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