The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jan. 15, 2025
Resonac Corporation, Tokyo, JP;
Shunsuke Noguchi, Tokyo, JP;
Resonac Corporation, Tokyo, JP;
Abstract
In a SiC wafer, a crystal surface has an offset angle of 0.5°-10° in a first direction with respect to a surface of the SiC wafer, dislocations are confirmed when a first measurement point is confirmed through X-ray reflection topography using (3-3016) as a diffraction surface, the first measurement point is a point shifted by a length of ½ of a radius of the SiC wafer in the first direction from the center of a measurement region that is 5 mm or more inside from the outer circumferential end of the SiC wafer, the dislocations include first dislocations having an aspect ratio of 5 or more and second dislocations having an aspect ratio of less than 3, where the aspect ratio is obtained by the specific method disclosed, and at the first measurement point, the density of the first dislocations is higher than the density of the second dislocations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile