The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Dec. 07, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hiroki Arai, Yamanashi, JP;
Tadashi Mitsunari, Yamanashi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/60 (2026.01); C23C 16/26 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6336 (2026.01); C23C 16/26 (2013.01); C23C 16/56 (2013.01); H01J 37/32091 (2013.01); H01J 37/32449 (2013.01); H01J 37/32568 (2013.01); H01J 37/32834 (2013.01); H01J 2237/3321 (2013.01); H10P 14/24 (2026.01); H10P 14/3406 (2026.01);
Abstract
A substrate processing method includes forming a carbon film on a substrate by plasma CVD using a processing gas including a carbon-containing gas; and performing a plasma post-processing on the formed carbon film, thereby reducing film stress of the carbon film by plasma of the processing gas including helium gas or a mixture of helium gas and argon gas but not including hydrogen.