The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Jul. 16, 2020
Microsoft Technology Licensing, Llc, Redmond, WA (US);
Microsoft Technology Licensing, LLC, Redmond, WA (US);
Abstract
A semiconductor device is fabricated by: forming a shadow wall on a substrate; subsequently growing a nanowire of semiconductor material on the substrate; and directionally depositing a layer of a further material on the nanowire from a direction selected such that the shadow wall casts a shadow on the nanowire, the shadow being a region in which the further material is not deposited. The nanowire is vertically orientated relative to the substrate. The shadow wall comprises a base portion and a bridge portion. The bridge portion overhangs the substrate and is supported by the base portion. Patterning of the further material may be achieved without the use of etching, thereby avoiding damage to the semiconductor. Also provided is a semiconductor-superconductor hybrid device; a quantum computing device comprising the semiconductor-superconductor hybrid device; and a shadow wall for controlling directional deposition of a material.