The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Jul. 12, 2021
Nichia Corporation, Anan, JP;
Yasunobu Hosokawa, Tokushima, JP;
NICHIA CORPORATION, Anan, JP;
Abstract
A light emitting element includes a first conductivity type semiconductor layer that is a nitride semiconductor layer containing Al and Ga. The first conductivity type semiconductor layer includes a first layer and a second layer. An Al percentage composition of the first layer is lower than an Al percentage composition of the second layer. The first conductivity type semiconductor layer has a first region and a second region. The first region is a region where the second conductivity type semiconductor layer and the active layer are stacked. The second region is exposed from the second conductivity type semiconductor layer and the active layer, and is connected to a first conductive member. A thickness of the first layer in the first region is smaller than a thickness of the first layer in the second region, or the second layer is exposed from the first layer in the first region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile