The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Nov. 29, 2023
Silanna Uv Technologies Pte Ltd, Singapore, SG;
Petar Atanackovic, Henley Beach South, AU;
Silanna UV Technologies Pte Ltd, Singapore, SG;
Abstract
In some embodiments, a semiconductor structure includes a first conductivity type region comprising a first superlattice, and an i-type active region adjacent to the first conductivity type region comprising an i-type superlattice. The first conductivity type region can be a p-type region or an n-type region. The first superlattice can be comprised of a plurality of first unit cells comprising a first set of single crystal layers, and the i-type superlattice can be comprised of a plurality of i-type unit cells comprising a second set of single crystal layers. An average alloy content of the plurality of the first unit cells and the i-type unit cells can be constant along a growth direction. The structure can be configured such that electrons and holes recombine to generate a spectrum of light with a longest wavelength peak that corresponds to a transition between electron and hole confined energy states within the i-type superlattice.