The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Apr. 13, 2023
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/225 (2025.01); H10F 39/10 (2025.01); H10F 77/00 (2025.01); H10F 77/14 (2025.01);
U.S. Cl.
CPC ...
H10F 30/225 (2025.01); H10F 39/107 (2025.01); H10F 77/14 (2025.01); H10F 77/959 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to single-photon avalanche diodes and methods of manufacture. The structure includes: a first deep trench structure in a semiconductor substrate having a conductive material and a material of a first polarity; a second deep trench structure in the semiconductor substrate surrounding the first deep trench structure, the second deep trench structure having a conductive material and a material of a second polarity; and contacts to both the first deep trench structure and the second deep trench structure.