The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Dec. 11, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Haojun Zhang, Schenectady, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Oleg Gluschenkov, Tannersville, NY (US);

Nicolas Jean Loubet, Guilderland, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 84/85 (2025.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H10D 62/126 (2025.01); H10D 62/121 (2025.01); H10D 62/154 (2025.01); H10D 62/158 (2025.01); H10D 62/393 (2025.01); H10D 84/853 (2025.01); H10D 88/00 (2025.01);
Abstract

A semiconductor structure containing optimized frontside interlayer dielectrics (ILDs) for a direct backside contact based backside power distribution network is provided. Notably, the frontside ILD materials that are present in the semiconductor structure are optimized such that a frontside ILD layer that is present on a critical circuit path has a thermal conductivity that is less than a thermal conductivity of a frontside ILD layer that is present on a non-circuit path.


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