The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Aug. 01, 2024
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Xingwei Tang, Wuhan, CN;
Guangchang Ye, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Examples of the present application provide a memory device, memory system, memory controller and operating method thereof, wherein the memory device includes: an array of memory cells, including multiple memory cells, and a preset number of memory cells forming one code word; peripheral circuit coupled to the array of memory cells and configured to: generate a first boundary voltage and a second boundary voltage in accordance with the first result corresponding to at least one code word at a target read voltage; make at least one adjustment to the target read voltage, and obtain the corresponding first result at the adjusted target read voltage after each adjustment; in a process of the adjustment, change a current direction of adjustment to the voltage in accordance with the target read voltage after one adjustment exceeding a range defined by the first boundary voltage and the second boundary voltage.