The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Jul. 31, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Christina Papagianni, San Jose, CA (US);

Murong Lang, San Jose, CA (US);

Guang Hu, Mountain View, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01);
Abstract

A memory sub-system controller selectively adjusts read threshold voltages on certain word lines for partially written memory blocks of a memory sub-system. The controller generates a request to read a portion of a set of memory components. The controller, in response to determining that the portion corresponds to a partially programmed block (PB), selectively modifies a boundary word line (WL) read level offset, stored in a boundary WL offset table, by applying an adjustment factor to the boundary WL read level offset. The controller reads a first set of data from one or more inner WLs of the portion using a first read level offset retrieved from an inner WL offset table and reads a second set of data from a boundary WL of the portion using the selectively modified boundary WL read level offset.


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